A High Power Low Dropout Voltage Regulator Design with an Enhanced Resistive Bank Circuit for Powering an RF IC for DSRC Applications

Qurat Ul Ain; Danial Khan; Muhammad Basim; Khuram Shehzad; Deeksha Verma; Kang Yoon Lee

A High Power Low Dropout Voltage Regulator Design with an Enhanced Resistive Bank Circuit for Powering an RF IC for DSRC Applications

Qurat Ul Ain
, Danial Khan
, Muhammad Basim
, Khuram Shehzad
, Deeksha Verma
, Kang Yoon Lee

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

This paper presents a high power Low Dropout Voltage Regulator Design with an enhanced resistive bank circuit for powering an RF IC for DSRC applications. Due to the addition of the enhanced resistor bank circuit, the feedback takes part in the amplified output from the input, such that the gain is controlled much more by the feedback network. A low pass filter is used to remove excess noise. The quiescent current of the proposed LDO structure is reduced to 3.85 μA from a 3.3 V supply voltage, to improve the power efficiency of LDO. Phase Margin of the bandgap reference circuit is 62.30°. For a load current of 100 mA settling time of 26 μs is achieved by the proposed LDO. PSRR of -46 dB is achieved till 1 kHz of frequency. Line regulation and Load regulation of the proposed LDO is 30.6 mV/V and 0.278 mV/mA respectively. This structure is implemented using 130 nm Bipolar-CMOS-DMOS (BCD) technology with an active area of 206 μm X 161 μm.

Original language	English
Title of host publication	ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	94-98
Number of pages	5
ISBN (Electronic)	9784885523281
State	Published - Jul 2020
Externally published	Yes
Event	35th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2020 - Nagoya, Japan Duration: 3 Jul 2020 → 6 Jul 2020

Publication series

Name	ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications

Conference

Conference	35th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2020
Country/Territory	Japan
City	Nagoya
Period	3/07/20 → 6/07/20

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 10 Reduced Inequalities
SDG 11 Sustainable Cities and Communities

Keywords

Bandgap Reference (BGR)
Dedicated Short Range Communication (DSRC)
Intelligent Transport System (ITS)
Low Drop Out voltage regulator (LDO)
Power Supply Rejection Ratio (PSRR)

Cite this

Ul Ain, Q., Khan, D., Basim, M., Shehzad, K., Verma, D., & Lee, K. Y. (2020). A High Power Low Dropout Voltage Regulator Design with an Enhanced Resistive Bank Circuit for Powering an RF IC for DSRC Applications. In ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications (pp. 94-98). Article 9183181 (ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications). Institute of Electrical and Electronics Engineers Inc..

Ul Ain, Qurat ; Khan, Danial ; Basim, Muhammad et al. / A High Power Low Dropout Voltage Regulator Design with an Enhanced Resistive Bank Circuit for Powering an RF IC for DSRC Applications. ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 94-98 (ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications).

@inproceedings{fba93252a4be47faa2596d3c4559e357,

title = "A High Power Low Dropout Voltage Regulator Design with an Enhanced Resistive Bank Circuit for Powering an RF IC for DSRC Applications",

abstract = "This paper presents a high power Low Dropout Voltage Regulator Design with an enhanced resistive bank circuit for powering an RF IC for DSRC applications. Due to the addition of the enhanced resistor bank circuit, the feedback takes part in the amplified output from the input, such that the gain is controlled much more by the feedback network. A low pass filter is used to remove excess noise. The quiescent current of the proposed LDO structure is reduced to 3.85 μA from a 3.3 V supply voltage, to improve the power efficiency of LDO. Phase Margin of the bandgap reference circuit is 62.30°. For a load current of 100 mA settling time of 26 μs is achieved by the proposed LDO. PSRR of -46 dB is achieved till 1 kHz of frequency. Line regulation and Load regulation of the proposed LDO is 30.6 mV/V and 0.278 mV/mA respectively. This structure is implemented using 130 nm Bipolar-CMOS-DMOS (BCD) technology with an active area of 206 μm X 161 μm.",

keywords = "Bandgap Reference (BGR), Dedicated Short Range Communication (DSRC), Intelligent Transport System (ITS), Low Drop Out voltage regulator (LDO), Power Supply Rejection Ratio (PSRR)",

author = "\{Ul Ain\}, Qurat and Danial Khan and Muhammad Basim and Khuram Shehzad and Deeksha Verma and Lee, \{Kang Yoon\}",

note = "Publisher Copyright: {\textcopyright} 2020 IEICE.; 35th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2020 ; Conference date: 03-07-2020 Through 06-07-2020",

year = "2020",

month = jul,

language = "English",

series = "ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Ul Ain, Q, Khan, D, Basim, M, Shehzad, K, Verma, D & Lee, KY 2020, A High Power Low Dropout Voltage Regulator Design with an Enhanced Resistive Bank Circuit for Powering an RF IC for DSRC Applications. in ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications., 9183181, ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications, Institute of Electrical and Electronics Engineers Inc., pp. 94-98, 35th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2020, Nagoya, Japan, 3/07/20.

A High Power Low Dropout Voltage Regulator Design with an Enhanced Resistive Bank Circuit for Powering an RF IC for DSRC Applications. / Ul Ain, Qurat; Khan, Danial; Basim, Muhammad et al.
ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications. Institute of Electrical and Electronics Engineers Inc., 2020. p. 94-98 9183181 (ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A High Power Low Dropout Voltage Regulator Design with an Enhanced Resistive Bank Circuit for Powering an RF IC for DSRC Applications

AU - Ul Ain, Qurat

AU - Khan, Danial

AU - Basim, Muhammad

AU - Shehzad, Khuram

AU - Verma, Deeksha

AU - Lee, Kang Yoon

PY - 2020/7

Y1 - 2020/7

N2 - This paper presents a high power Low Dropout Voltage Regulator Design with an enhanced resistive bank circuit for powering an RF IC for DSRC applications. Due to the addition of the enhanced resistor bank circuit, the feedback takes part in the amplified output from the input, such that the gain is controlled much more by the feedback network. A low pass filter is used to remove excess noise. The quiescent current of the proposed LDO structure is reduced to 3.85 μA from a 3.3 V supply voltage, to improve the power efficiency of LDO. Phase Margin of the bandgap reference circuit is 62.30°. For a load current of 100 mA settling time of 26 μs is achieved by the proposed LDO. PSRR of -46 dB is achieved till 1 kHz of frequency. Line regulation and Load regulation of the proposed LDO is 30.6 mV/V and 0.278 mV/mA respectively. This structure is implemented using 130 nm Bipolar-CMOS-DMOS (BCD) technology with an active area of 206 μm X 161 μm.

AB - This paper presents a high power Low Dropout Voltage Regulator Design with an enhanced resistive bank circuit for powering an RF IC for DSRC applications. Due to the addition of the enhanced resistor bank circuit, the feedback takes part in the amplified output from the input, such that the gain is controlled much more by the feedback network. A low pass filter is used to remove excess noise. The quiescent current of the proposed LDO structure is reduced to 3.85 μA from a 3.3 V supply voltage, to improve the power efficiency of LDO. Phase Margin of the bandgap reference circuit is 62.30°. For a load current of 100 mA settling time of 26 μs is achieved by the proposed LDO. PSRR of -46 dB is achieved till 1 kHz of frequency. Line regulation and Load regulation of the proposed LDO is 30.6 mV/V and 0.278 mV/mA respectively. This structure is implemented using 130 nm Bipolar-CMOS-DMOS (BCD) technology with an active area of 206 μm X 161 μm.

KW - Bandgap Reference (BGR)

KW - Dedicated Short Range Communication (DSRC)

KW - Intelligent Transport System (ITS)

KW - Low Drop Out voltage regulator (LDO)

KW - Power Supply Rejection Ratio (PSRR)

UR - https://www.scopus.com/pages/publications/85091463363

M3 - Conference contribution

AN - SCOPUS:85091463363

T3 - ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications

SP - 94

EP - 98

BT - ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 35th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2020

Y2 - 3 July 2020 through 6 July 2020

ER -

Ul Ain Q, Khan D, Basim M, Shehzad K, Verma D, Lee KY. A High Power Low Dropout Voltage Regulator Design with an Enhanced Resistive Bank Circuit for Powering an RF IC for DSRC Applications. In ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications. Institute of Electrical and Electronics Engineers Inc. 2020. p. 94-98. 9183181. (ITC-CSCC 2020 - 35th International Technical Conference on Circuits/Systems, Computers and Communications).

A High Power Low Dropout Voltage Regulator Design with an Enhanced Resistive Bank Circuit for Powering an RF IC for DSRC Applications

Abstract

Publication series

Conference

UN SDGs

Keywords

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