TY - GEN
T1 - A high aspect ratio 2D gimbaled microscanner with large static rotation
AU - Kwon, Sunghoon
AU - Milanović, V.
AU - Lee, L. P.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - Introduces an isolation method for SOI MEMS technologies, and demonstrates a high aspect ratio 2D gimbaled microscanner with large static rotation using the method. The proposed isolation method, termed backside island process, provides electrical isolation and mechanical coupling of SOI structures through deep reactive ion etching of the backside substrate. The fabricated 2D mirrors perform large static optical deflection from -20.3° to 15.6° by outer gimbal and from 0° to -11.9° by inner mirror.
AB - Introduces an isolation method for SOI MEMS technologies, and demonstrates a high aspect ratio 2D gimbaled microscanner with large static rotation using the method. The proposed isolation method, termed backside island process, provides electrical isolation and mechanical coupling of SOI structures through deep reactive ion etching of the backside substrate. The fabricated 2D mirrors perform large static optical deflection from -20.3° to 15.6° by outer gimbal and from 0° to -11.9° by inner mirror.
UR - https://www.scopus.com/pages/publications/4344679430
U2 - 10.1109/OMEMS.2002.1031486
DO - 10.1109/OMEMS.2002.1031486
M3 - Conference contribution
AN - SCOPUS:4344679430
T3 - 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest
SP - 149
EP - 150
BT - 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002
Y2 - 20 August 2002 through 23 August 2002
ER -