A heterojunction bipolar transistor large-signal model focused on the saturation region

Jongchan Kang; Youngoo Yang; Sungwoo Kim; Bumman Kim

doi:10.1109/EUMA.2002.339247

A heterojunction bipolar transistor large-signal model focused on the saturation region

Jongchan Kang
, Youngoo Yang
, Sungwoo Kim
, Bumman Kim

Pohang University of Science and Technology

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

We present a new large signal model of HBT for accurately fitting IC-VCE curves at the saturation region. Because of the highly doped base of HBT, the collector is high-level injected in the region. This model treats the high-level injected collector as an effective base width widening and the saturation current terms of Ebers-Moll model are modified accordingly. A new empirical function is used to describe the base width variation. The simulation results using the model follow the measured IC-VCE curves at the saturation region very well. For verification, this model is applied to a multi-finger HBT and load-pull simulation results based on the model are compared with measured ones.

Original language	English
DOIs	https://doi.org/10.1109/EUMA.2002.339247
State	Published - 2002
Externally published	Yes
Event	2002 32nd European Microwave Conference, EuMC 2002 - Milan, Italy Duration: 23 Sep 2002 → 26 Sep 2002

Conference

Conference	2002 32nd European Microwave Conference, EuMC 2002
Country/Territory	Italy
City	Milan
Period	23/09/02 → 26/09/02

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10.1109/EUMA.2002.339247

Cite this

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title = "A heterojunction bipolar transistor large-signal model focused on the saturation region",

abstract = "We present a new large signal model of HBT for accurately fitting IC-VCE curves at the saturation region. Because of the highly doped base of HBT, the collector is high-level injected in the region. This model treats the high-level injected collector as an effective base width widening and the saturation current terms of Ebers-Moll model are modified accordingly. A new empirical function is used to describe the base width variation. The simulation results using the model follow the measured IC-VCE curves at the saturation region very well. For verification, this model is applied to a multi-finger HBT and load-pull simulation results based on the model are compared with measured ones.",

author = "Jongchan Kang and Youngoo Yang and Sungwoo Kim and Bumman Kim",

year = "2002",

doi = "10.1109/EUMA.2002.339247",

language = "English",

note = "2002 32nd European Microwave Conference, EuMC 2002 ; Conference date: 23-09-2002 Through 26-09-2002",

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T1 - A heterojunction bipolar transistor large-signal model focused on the saturation region

AU - Kang, Jongchan

AU - Yang, Youngoo

AU - Kim, Sungwoo

AU - Kim, Bumman

PY - 2002

Y1 - 2002

N2 - We present a new large signal model of HBT for accurately fitting IC-VCE curves at the saturation region. Because of the highly doped base of HBT, the collector is high-level injected in the region. This model treats the high-level injected collector as an effective base width widening and the saturation current terms of Ebers-Moll model are modified accordingly. A new empirical function is used to describe the base width variation. The simulation results using the model follow the measured IC-VCE curves at the saturation region very well. For verification, this model is applied to a multi-finger HBT and load-pull simulation results based on the model are compared with measured ones.

AB - We present a new large signal model of HBT for accurately fitting IC-VCE curves at the saturation region. Because of the highly doped base of HBT, the collector is high-level injected in the region. This model treats the high-level injected collector as an effective base width widening and the saturation current terms of Ebers-Moll model are modified accordingly. A new empirical function is used to describe the base width variation. The simulation results using the model follow the measured IC-VCE curves at the saturation region very well. For verification, this model is applied to a multi-finger HBT and load-pull simulation results based on the model are compared with measured ones.

UR - https://www.scopus.com/pages/publications/84897547287

U2 - 10.1109/EUMA.2002.339247

DO - 10.1109/EUMA.2002.339247

M3 - Paper

AN - SCOPUS:84897547287

T2 - 2002 32nd European Microwave Conference, EuMC 2002

Y2 - 23 September 2002 through 26 September 2002

ER -

A heterojunction bipolar transistor large-signal model focused on the saturation region

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