@inproceedings{9c4a1329c0444219b3c0971e16d0e4e0,
title = "A gain boosted single stage wideband InP HBT amplifier for terahertz applications",
abstract = "A 250 nm indium phosphide (InP) heterojunction bipolar transistor (HBT) based wideband and novel gain-boosted single-ended power amplifier is presented for millimeter-wave frequency range. A common-emitter configuration is used with feedback embedding network to boost the gain upto Gmax (Maximum Achievable Gain) from Gma (Maximum Available Gain) of HBT. We achieved the Gma up to U (Mason's Gain) due to the instability of HBT. The achieved power gain is 7.2-dB with 61 GHz bandwidth (285-346 GHz), and the power consumption is 114 mW. The ultrawideband and high gain characteristic of the proposed amplifier makes it an attractive choice for the wide range of terahertz and next-generation 6G communication circuits.",
keywords = "Embedding network, Feedback network, Power amplifier (PA), Terahertz (THz), Wideband",
author = "Waseem Abbas and Munkyo Seo",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 16th International Conference on Ubiquitous Information Management and Communication, IMCOM 2022 ; Conference date: 03-01-2022 Through 05-01-2022",
year = "2022",
doi = "10.1109/IMCOM53663.2022.9721734",
language = "English",
series = "Proceedings of the 2022 16th International Conference on Ubiquitous Information Management and Communication, IMCOM 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Sukhan Lee and Hyunseung Choo and Roslan Ismail",
booktitle = "Proceedings of the 2022 16th International Conference on Ubiquitous Information Management and Communication, IMCOM 2022",
}