A design of ultra-low noise LDO using noise reduction network techniques

Hamed Abbasizadeh; Behnam Samadpoor Rikan; Truong Thi Kim Nga; Kwan Tae Kim; Sung Jin Kim; Dong Soo Lee; Kang Yoon Lee

doi:10.1109/ISOCC.2017.8368850

A design of ultra-low noise LDO using noise reduction network techniques

Hamed Abbasizadeh, Behnam Samadpoor Rikan, Truong Thi Kim Nga, Kwan Tae Kim, Sung Jin Kim, Dong Soo Lee, Kang Yoon Lee

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

This paper presents an ultra-low noise low-dropout (LDO) regulators for powering RF applications. The proposed LDO employs two internal noise reduction network at the output of the bandgap reference (BGR), and between output and feedback resistors node (VFB in Fig. 1) of LDO to achieve ultra-low noise at interest frequencies. The 5-bits controlled resistor ladder is adopted to compensate the process, voltage, and temperature (PVT) variations. The output voltage level of LDO can be from 1.05 V to 2.6 V with trimming step of 50 mV. The highest output noise of the LDO is 64.52 nV/VHz at 10 KHz. The proposed LDO is implemented in CMOS 55 nm technology with the die size of 480 μm × 330 μm.

Original language	English
Title of host publication	Proceedings - International SoC Design Conference 2017, ISOCC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	198-199
Number of pages	2
ISBN (Electronic)	9781538622858
DOIs	https://doi.org/10.1109/ISOCC.2017.8368850
State	Published - 29 May 2018
Event	14th International SoC Design Conference, ISOCC 2017 - Seoul, Korea, Republic of Duration: 5 Nov 2017 → 8 Nov 2017

Publication series

Name	Proceedings - International SoC Design Conference 2017, ISOCC 2017

Conference

Conference	14th International SoC Design Conference, ISOCC 2017
Country/Territory	Korea, Republic of
City	Seoul
Period	5/11/17 → 8/11/17

Keywords

Bandgap Reference
Low-Dropout Regulator
PLL
Ultra-Low Noise
VCO

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10.1109/ISOCC.2017.8368850

Cite this

Abbasizadeh, H., Rikan, B. S., Nga, T. T. K., Kim, K. T., Kim, S. J., Lee, D. S., & Lee, K. Y. (2018). A design of ultra-low noise LDO using noise reduction network techniques. In Proceedings - International SoC Design Conference 2017, ISOCC 2017 (pp. 198-199). (Proceedings - International SoC Design Conference 2017, ISOCC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2017.8368850

@inproceedings{ed109a6b2eaa4604a4a2c11672112759,

title = "A design of ultra-low noise LDO using noise reduction network techniques",

abstract = "This paper presents an ultra-low noise low-dropout (LDO) regulators for powering RF applications. The proposed LDO employs two internal noise reduction network at the output of the bandgap reference (BGR), and between output and feedback resistors node (VFB in Fig. 1) of LDO to achieve ultra-low noise at interest frequencies. The 5-bits controlled resistor ladder is adopted to compensate the process, voltage, and temperature (PVT) variations. The output voltage level of LDO can be from 1.05 V to 2.6 V with trimming step of 50 mV. The highest output noise of the LDO is 64.52 nV/VHz at 10 KHz. The proposed LDO is implemented in CMOS 55 nm technology with the die size of 480 μm × 330 μm.",

keywords = "Bandgap Reference, Low-Dropout Regulator, PLL, Ultra-Low Noise, VCO",

author = "Hamed Abbasizadeh and Rikan, \{Behnam Samadpoor\} and Nga, \{Truong Thi Kim\} and Kim, \{Kwan Tae\} and Kim, \{Sung Jin\} and Lee, \{Dong Soo\} and Lee, \{Kang Yoon\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 14th International SoC Design Conference, ISOCC 2017 ; Conference date: 05-11-2017 Through 08-11-2017",

year = "2018",

month = may,

day = "29",

doi = "10.1109/ISOCC.2017.8368850",

language = "English",

series = "Proceedings - International SoC Design Conference 2017, ISOCC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "198--199",

booktitle = "Proceedings - International SoC Design Conference 2017, ISOCC 2017",

}

Abbasizadeh, H, Rikan, BS, Nga, TTK, Kim, KT, Kim, SJ, Lee, DS & Lee, KY 2018, A design of ultra-low noise LDO using noise reduction network techniques. in Proceedings - International SoC Design Conference 2017, ISOCC 2017. Proceedings - International SoC Design Conference 2017, ISOCC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 198-199, 14th International SoC Design Conference, ISOCC 2017, Seoul, Korea, Republic of, 5/11/17. https://doi.org/10.1109/ISOCC.2017.8368850

A design of ultra-low noise LDO using noise reduction network techniques. / Abbasizadeh, Hamed; Rikan, Behnam Samadpoor; Nga, Truong Thi Kim et al.
Proceedings - International SoC Design Conference 2017, ISOCC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 198-199 (Proceedings - International SoC Design Conference 2017, ISOCC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A design of ultra-low noise LDO using noise reduction network techniques

AU - Abbasizadeh, Hamed

AU - Rikan, Behnam Samadpoor

AU - Nga, Truong Thi Kim

AU - Kim, Kwan Tae

AU - Kim, Sung Jin

AU - Lee, Dong Soo

AU - Lee, Kang Yoon

PY - 2018/5/29

Y1 - 2018/5/29

N2 - This paper presents an ultra-low noise low-dropout (LDO) regulators for powering RF applications. The proposed LDO employs two internal noise reduction network at the output of the bandgap reference (BGR), and between output and feedback resistors node (VFB in Fig. 1) of LDO to achieve ultra-low noise at interest frequencies. The 5-bits controlled resistor ladder is adopted to compensate the process, voltage, and temperature (PVT) variations. The output voltage level of LDO can be from 1.05 V to 2.6 V with trimming step of 50 mV. The highest output noise of the LDO is 64.52 nV/VHz at 10 KHz. The proposed LDO is implemented in CMOS 55 nm technology with the die size of 480 μm × 330 μm.

AB - This paper presents an ultra-low noise low-dropout (LDO) regulators for powering RF applications. The proposed LDO employs two internal noise reduction network at the output of the bandgap reference (BGR), and between output and feedback resistors node (VFB in Fig. 1) of LDO to achieve ultra-low noise at interest frequencies. The 5-bits controlled resistor ladder is adopted to compensate the process, voltage, and temperature (PVT) variations. The output voltage level of LDO can be from 1.05 V to 2.6 V with trimming step of 50 mV. The highest output noise of the LDO is 64.52 nV/VHz at 10 KHz. The proposed LDO is implemented in CMOS 55 nm technology with the die size of 480 μm × 330 μm.

KW - Bandgap Reference

KW - Low-Dropout Regulator

KW - PLL

KW - Ultra-Low Noise

KW - VCO

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U2 - 10.1109/ISOCC.2017.8368850

DO - 10.1109/ISOCC.2017.8368850

M3 - Conference contribution

AN - SCOPUS:85048897689

T3 - Proceedings - International SoC Design Conference 2017, ISOCC 2017

SP - 198

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BT - Proceedings - International SoC Design Conference 2017, ISOCC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th International SoC Design Conference, ISOCC 2017

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ER -

Abbasizadeh H, Rikan BS, Nga TTK, Kim KT, Kim SJ, Lee DS et al. A design of ultra-low noise LDO using noise reduction network techniques. In Proceedings - International SoC Design Conference 2017, ISOCC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 198-199. (Proceedings - International SoC Design Conference 2017, ISOCC 2017). doi: 10.1109/ISOCC.2017.8368850

A design of ultra-low noise LDO using noise reduction network techniques

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