@inproceedings{a3fc02423bd54000b4d9fea720d3d363,
title = "A Design of Ultra Low Noise Amplifier through Output Sharing Multi-Input structure using 65nm SOI process technology",
abstract = "This paper describes Design Low Noise Amplifier. This structure satisfies the High Band (1.8G to 2.7GHz) band of LTE RF communication by switching three External Input Inductors. Furthermore, the LNA presented implements proposes Ultra Low Noise techniques via Multi-Input structures. The designed LNA has the highest Gain: 18 dB and the lowest NF: 0.7 dB on 65nm SOI process technology.",
keywords = "65nm SOI process, Low Noise Amplifier (LNA), Multi-input, Output Sharing, Ultra Low Noise, Ultra Wide Bandwidth",
author = "Kyungjin Lee and Kangyoon Lee",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2021 ; Conference date: 01-11-2021 Through 03-11-2021",
year = "2021",
doi = "10.1109/ICCE-Asia53811.2021.9641917",
language = "English",
series = "2021 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2021",
}