A comparison of Ga:ZnO and Ga:ZnO/Ag/Ga:ZnO source/drain electrodes for In-Ga-Zn-O thin film transistors

Kwang Hyuk Choi; Sanghun Jeon; Han Ki Kim

doi:10.1016/j.materresbull.2012.04.084

A comparison of Ga:ZnO and Ga:ZnO/Ag/Ga:ZnO source/drain electrodes for In-Ga-Zn-O thin film transistors

Kwang Hyuk Choi
, Sanghun Jeon
, Han Ki Kim

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We compared the characteristics of single Ga:ZnO (GZO) and GZO/Ag/GZO multilayer electrodes for source/drain (S/D) contacts in amorphous In-Ga-Zn-O (a-IGZO)-based thin film transistors (TFTs). Due to the existence of a Ag metallic layer between the GZO layers, the GZO/Ag/GZO multilayer electrode exhibited low sheet resistance (3.95 ohm/sq.) and resistivity (3.32 × 10 ^-5 ohm-cm). The saturation mobility (10.2 cm ² V ^-1 s ^-1) of the a-IGZO TFT with GZO/Ag/GZO S/D electrodes is much higher than that attained for the a-IGZO TFT with single GZO S/D electrodes (0.7 cm ² V ^-1 s ^-1) due to the lower resistivity of the GZO/Ag/GZO multilayer S/D electrode. Furthermore, it is expected that the high transparency of the GZO/Ag/GZO multilayer will allow for the possible realization of fully transparent a-IGZO TFTs.

Original language	English
Pages (from-to)	2915-2918
Number of pages	4
Journal	Materials Research Bulletin
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/j.materresbull.2012.04.084
State	Published - Oct 2012
Externally published	Yes

Keywords

A. Oxides
A. Semiconductors
B. Sputtering
D. Electrical properties

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10.1016/j.materresbull.2012.04.084

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title = "A comparison of Ga:ZnO and Ga:ZnO/Ag/Ga:ZnO source/drain electrodes for In-Ga-Zn-O thin film transistors",

abstract = "We compared the characteristics of single Ga:ZnO (GZO) and GZO/Ag/GZO multilayer electrodes for source/drain (S/D) contacts in amorphous In-Ga-Zn-O (a-IGZO)-based thin film transistors (TFTs). Due to the existence of a Ag metallic layer between the GZO layers, the GZO/Ag/GZO multilayer electrode exhibited low sheet resistance (3.95 ohm/sq.) and resistivity (3.32 × 10 -5 ohm-cm). The saturation mobility (10.2 cm 2 V -1 s -1) of the a-IGZO TFT with GZO/Ag/GZO S/D electrodes is much higher than that attained for the a-IGZO TFT with single GZO S/D electrodes (0.7 cm 2 V -1 s -1) due to the lower resistivity of the GZO/Ag/GZO multilayer S/D electrode. Furthermore, it is expected that the high transparency of the GZO/Ag/GZO multilayer will allow for the possible realization of fully transparent a-IGZO TFTs.",

keywords = "A. Oxides, A. Semiconductors, B. Sputtering, D. Electrical properties",

author = "Choi, \{Kwang Hyuk\} and Sanghun Jeon and Kim, \{Han Ki\}",

year = "2012",

month = oct,

doi = "10.1016/j.materresbull.2012.04.084",

language = "English",

volume = "47",

pages = "2915--2918",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - A comparison of Ga:ZnO and Ga:ZnO/Ag/Ga:ZnO source/drain electrodes for In-Ga-Zn-O thin film transistors

AU - Choi, Kwang Hyuk

AU - Jeon, Sanghun

AU - Kim, Han Ki

PY - 2012/10

Y1 - 2012/10

N2 - We compared the characteristics of single Ga:ZnO (GZO) and GZO/Ag/GZO multilayer electrodes for source/drain (S/D) contacts in amorphous In-Ga-Zn-O (a-IGZO)-based thin film transistors (TFTs). Due to the existence of a Ag metallic layer between the GZO layers, the GZO/Ag/GZO multilayer electrode exhibited low sheet resistance (3.95 ohm/sq.) and resistivity (3.32 × 10 -5 ohm-cm). The saturation mobility (10.2 cm 2 V -1 s -1) of the a-IGZO TFT with GZO/Ag/GZO S/D electrodes is much higher than that attained for the a-IGZO TFT with single GZO S/D electrodes (0.7 cm 2 V -1 s -1) due to the lower resistivity of the GZO/Ag/GZO multilayer S/D electrode. Furthermore, it is expected that the high transparency of the GZO/Ag/GZO multilayer will allow for the possible realization of fully transparent a-IGZO TFTs.

AB - We compared the characteristics of single Ga:ZnO (GZO) and GZO/Ag/GZO multilayer electrodes for source/drain (S/D) contacts in amorphous In-Ga-Zn-O (a-IGZO)-based thin film transistors (TFTs). Due to the existence of a Ag metallic layer between the GZO layers, the GZO/Ag/GZO multilayer electrode exhibited low sheet resistance (3.95 ohm/sq.) and resistivity (3.32 × 10 -5 ohm-cm). The saturation mobility (10.2 cm 2 V -1 s -1) of the a-IGZO TFT with GZO/Ag/GZO S/D electrodes is much higher than that attained for the a-IGZO TFT with single GZO S/D electrodes (0.7 cm 2 V -1 s -1) due to the lower resistivity of the GZO/Ag/GZO multilayer S/D electrode. Furthermore, it is expected that the high transparency of the GZO/Ag/GZO multilayer will allow for the possible realization of fully transparent a-IGZO TFTs.

KW - A. Oxides

KW - A. Semiconductors

KW - B. Sputtering

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84866316768

U2 - 10.1016/j.materresbull.2012.04.084

DO - 10.1016/j.materresbull.2012.04.084

M3 - Article

AN - SCOPUS:84866316768

SN - 0025-5408

VL - 47

SP - 2915

EP - 2918

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 10

ER -

A comparison of Ga:ZnO and Ga:ZnO/Ag/Ga:ZnO source/drain electrodes for In-Ga-Zn-O thin film transistors

Abstract

Keywords

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