A 77 GHz low LO power mixer with a split self-driven switching cell in 65 nm CMOS technology

Seong Kyun Kim; Chenglin Cui; Guochi Huang; Soyoung Kim; Byung Sung Kim

doi:10.1109/LMWC.2012.2213076

A 77 GHz low LO power mixer with a split self-driven switching cell in 65 nm CMOS technology

Seong Kyun Kim, Chenglin Cui, Guochi Huang, Soyoung Kim, Byung Sung Kim

Department of Semiconductor Systems Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A low LO power mixer with high gain by using a split self-driven switching cell for automotive applications at 77 GHz is presented. By splitting the switching cell, the required LO power is reduced and the VCO has less capacitive loading. The mixer has a peak conversion gain of 6.8 dB and the input 1 dB compression point is - 7 dBm at LO power of - 5 dBm. The chip is fabricated in 65 nm CMOS technology and the chip size including a Marchand balun is 790 μm 590 × μm. The total power consumption is 3 mW from a 1.2 V supply.

Original language	English
Article number	6279473
Pages (from-to)	480-482
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	22
Issue number	9
DOIs	https://doi.org/10.1109/LMWC.2012.2213076
State	Published - 2012

Keywords

77 GHz down-converter
Automotive radar
CMOS integrated circuit
mixers
phased-array

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10.1109/LMWC.2012.2213076

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title = "A 77 GHz low LO power mixer with a split self-driven switching cell in 65 nm CMOS technology",

abstract = "A low LO power mixer with high gain by using a split self-driven switching cell for automotive applications at 77 GHz is presented. By splitting the switching cell, the required LO power is reduced and the VCO has less capacitive loading. The mixer has a peak conversion gain of 6.8 dB and the input 1 dB compression point is - 7 dBm at LO power of - 5 dBm. The chip is fabricated in 65 nm CMOS technology and the chip size including a Marchand balun is 790 μm 590 × μm. The total power consumption is 3 mW from a 1.2 V supply.",

keywords = "77 GHz down-converter, Automotive radar, CMOS integrated circuit, mixers, phased-array",

author = "Kim, \{Seong Kyun\} and Chenglin Cui and Guochi Huang and Soyoung Kim and Kim, \{Byung Sung\}",

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AU - Cui, Chenglin

AU - Huang, Guochi

AU - Kim, Soyoung

AU - Kim, Byung Sung

PY - 2012

Y1 - 2012

N2 - A low LO power mixer with high gain by using a split self-driven switching cell for automotive applications at 77 GHz is presented. By splitting the switching cell, the required LO power is reduced and the VCO has less capacitive loading. The mixer has a peak conversion gain of 6.8 dB and the input 1 dB compression point is - 7 dBm at LO power of - 5 dBm. The chip is fabricated in 65 nm CMOS technology and the chip size including a Marchand balun is 790 μm 590 × μm. The total power consumption is 3 mW from a 1.2 V supply.

AB - A low LO power mixer with high gain by using a split self-driven switching cell for automotive applications at 77 GHz is presented. By splitting the switching cell, the required LO power is reduced and the VCO has less capacitive loading. The mixer has a peak conversion gain of 6.8 dB and the input 1 dB compression point is - 7 dBm at LO power of - 5 dBm. The chip is fabricated in 65 nm CMOS technology and the chip size including a Marchand balun is 790 μm 590 × μm. The total power consumption is 3 mW from a 1.2 V supply.

KW - 77 GHz down-converter

KW - Automotive radar

KW - CMOS integrated circuit

KW - mixers

KW - phased-array

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JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 9

M1 - 6279473

ER -

A 77 GHz low LO power mixer with a split self-driven switching cell in 65 nm CMOS technology

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