A 64-MHz 2.15-µW/MHz On-Chip Relaxation Oscillator with 130-ppm/°C Temperature Coefficient

  • S. Ali Hosseini Asl
  • , Reza E. Rad
  • , Arash Hejazi
  • , Young Gun Pu
  • , Kang Yoon Lee

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a 2.15 µW/MHz at the frequency of 64 MHz relaxation oscillator with a dynamic range of frequency from 47.5 MHz to 80 MHz. To reduce the power consumption and improve energy efficiency, this work employs only one comparator and one capacitor to generate the output clock in comparison with conventional relaxation oscillator structures. A total of 50% ± 5% of the duty cycle is obtained for the output clock by implementing an auxiliary comparator. The proposed relaxation oscillator uses the output voltages of an external low-dropout (LDO) voltage and bandgap reference (BGR) for the required supply and reference voltages, respectively. Two current sources are implemented to provide the required currents for trimming the output frequency and driving the comparators. Measurement results indicate that the relaxation oscillator achieves a temperature coefficient (TC) of 130 ppm/°C over a wide temperature range from −25 °C to 135 °C at the frequency of 64 MHz. The relaxation oscillator consumes 115 µA of current at the frequency of 64 MHz under a low-dropout (LDO) voltage of 1.2 V. The proposed relaxation oscillator is analyzed and fabricated in standard 90 nm complementary metal-oxide semiconductor (CMOS) process, and the die area is 130 µm × 90 µm.

Original languageEnglish
Article number1144
JournalElectronics (Switzerland)
Volume12
Issue number5
DOIs
StatePublished - Mar 2023

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • crystal replacement
  • duty cycle compensation
  • hysteresis comparator
  • low-power oscillator
  • relaxation oscillator

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