A 600 GHz InP HBT amplifier using cross-coupled feedback stabilization and dual-Differential Power Combining

  • Munkyo Seo
  • , Miguel Urteaga
  • , Jonathan Hacker
  • , Adam Young
  • , Anders Skalare
  • , Robert Lin
  • , Mark Rodwell

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

26 Scopus citations

Abstract

We report a 600 GHz amplifier with > 30 dB peak gain, based on 12 cascaded differential common-base (CB) stages, in a 130 nm InP HBT process. Three consecutive CB stages are grouped as a unit gain block, sharing a common bias current. Each CB stage is stabilized by cross-coupled capacitive feedback. Output powers from two differential branches are combined through a 4-way combiner, resulting in a 4× increase in power compared to a single single-ended output stage. On-wafer testing in WR-1.5 band (500-750 GHz) shows that the amplifier exhibits > 20 dB of gain up to 620 GHz, with +2.8 dBm of saturated output power at 585 GHz, while consuming 455 mW.

Original languageEnglish
Title of host publication2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
StatePublished - 2013
Externally publishedYes
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: 2 Jun 20137 Jun 2013

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
Country/TerritoryUnited States
CitySeattle, WA
Period2/06/137/06/13

Keywords

  • Amplifiers
  • Cross-coupled feedback
  • Hetero-junction bipolar transistors
  • Power combining
  • Terahertz

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