A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology

Utku Soylu; Amirreza Alizadeh; Munkyo Seo; Mark J.W. Rodwell

doi:10.1109/BCICTS53451.2022.10051696

A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology

Utku Soylu, Amirreza Alizadeh, Munkyo Seo, Mark J.W. Rodwell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We report a 280 GHz x8 frequency multiplier chain in 250 nm InP HBT technology. Emitter coupled pair in push-push configuration act as a balanced frequency doubler. The x8 frequency multiplier chain consists of three cascaded frequency doublers. Passive transformers are used to generate single-ended to differential conversion. At 280 GHz, the multiplier chain generates -0.6 dBm output power with 3-dB bandwidth of 48 GHz with input power of -2 dBm at 35 GHz. The unwanted harmonics are suppressed by more than 28 dBc over the frequency range of interest. It consumes 112 mW of DC power and occupies 0.4 mm2 of the chip area. To the authors' knowledge, these results demonstrate record spectral purity for H-band frequency multipliers working around 280 GHz with low DC power consumption.

Original language	English
Title of host publication	2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	191-194
Number of pages	4
ISBN (Electronic)	9781665491327
DOIs	https://doi.org/10.1109/BCICTS53451.2022.10051696
State	Published - 2022
Externally published	Yes
Event	2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022 - Phoenix, United States Duration: 16 Oct 2022 → 19 Oct 2022

Publication series

Name	2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022

Conference

Conference	2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022
Country/Territory	United States
City	Phoenix
Period	16/10/22 → 19/10/22

Keywords

balanced frequency doubler
double heterojunction bipolar transistor (DHBT)
frequency multiplier
H-band
high spectral purity
indium phosphide (InP)
millimeter wave

Access to Document

10.1109/BCICTS53451.2022.10051696

Cite this

Soylu, U., Alizadeh, A., Seo, M., & Rodwell, M. J. W. (2022). A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology. In 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022 (pp. 191-194). (2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCICTS53451.2022.10051696

Soylu, Utku ; Alizadeh, Amirreza ; Seo, Munkyo et al. / A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology. 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 191-194 (2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022).

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title = "A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology",

abstract = "We report a 280 GHz x8 frequency multiplier chain in 250 nm InP HBT technology. Emitter coupled pair in push-push configuration act as a balanced frequency doubler. The x8 frequency multiplier chain consists of three cascaded frequency doublers. Passive transformers are used to generate single-ended to differential conversion. At 280 GHz, the multiplier chain generates -0.6 dBm output power with 3-dB bandwidth of 48 GHz with input power of -2 dBm at 35 GHz. The unwanted harmonics are suppressed by more than 28 dBc over the frequency range of interest. It consumes 112 mW of DC power and occupies 0.4 mm2 of the chip area. To the authors' knowledge, these results demonstrate record spectral purity for H-band frequency multipliers working around 280 GHz with low DC power consumption.",

keywords = "balanced frequency doubler, double heterojunction bipolar transistor (DHBT), frequency multiplier, H-band, high spectral purity, indium phosphide (InP), millimeter wave",

author = "Utku Soylu and Amirreza Alizadeh and Munkyo Seo and Rodwell, \{Mark J.W.\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022 ; Conference date: 16-10-2022 Through 19-10-2022",

year = "2022",

doi = "10.1109/BCICTS53451.2022.10051696",

language = "English",

series = "2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Soylu, U, Alizadeh, A, Seo, M & Rodwell, MJW 2022, A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology. in 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022. 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Institute of Electrical and Electronics Engineers Inc., pp. 191-194, 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, United States, 16/10/22. https://doi.org/10.1109/BCICTS53451.2022.10051696

A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology. / Soylu, Utku; Alizadeh, Amirreza; Seo, Munkyo et al.
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 191-194 (2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology

AU - Soylu, Utku

AU - Alizadeh, Amirreza

AU - Seo, Munkyo

AU - Rodwell, Mark J.W.

PY - 2022

Y1 - 2022

N2 - We report a 280 GHz x8 frequency multiplier chain in 250 nm InP HBT technology. Emitter coupled pair in push-push configuration act as a balanced frequency doubler. The x8 frequency multiplier chain consists of three cascaded frequency doublers. Passive transformers are used to generate single-ended to differential conversion. At 280 GHz, the multiplier chain generates -0.6 dBm output power with 3-dB bandwidth of 48 GHz with input power of -2 dBm at 35 GHz. The unwanted harmonics are suppressed by more than 28 dBc over the frequency range of interest. It consumes 112 mW of DC power and occupies 0.4 mm2 of the chip area. To the authors' knowledge, these results demonstrate record spectral purity for H-band frequency multipliers working around 280 GHz with low DC power consumption.

AB - We report a 280 GHz x8 frequency multiplier chain in 250 nm InP HBT technology. Emitter coupled pair in push-push configuration act as a balanced frequency doubler. The x8 frequency multiplier chain consists of three cascaded frequency doublers. Passive transformers are used to generate single-ended to differential conversion. At 280 GHz, the multiplier chain generates -0.6 dBm output power with 3-dB bandwidth of 48 GHz with input power of -2 dBm at 35 GHz. The unwanted harmonics are suppressed by more than 28 dBc over the frequency range of interest. It consumes 112 mW of DC power and occupies 0.4 mm2 of the chip area. To the authors' knowledge, these results demonstrate record spectral purity for H-band frequency multipliers working around 280 GHz with low DC power consumption.

KW - balanced frequency doubler

KW - double heterojunction bipolar transistor (DHBT)

KW - frequency multiplier

KW - H-band

KW - high spectral purity

KW - indium phosphide (InP)

KW - millimeter wave

UR - https://www.scopus.com/pages/publications/85150019392

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DO - 10.1109/BCICTS53451.2022.10051696

M3 - Conference contribution

AN - SCOPUS:85150019392

T3 - 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022

SP - 191

EP - 194

BT - 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022

Y2 - 16 October 2022 through 19 October 2022

ER -

Soylu U, Alizadeh A, Seo M, Rodwell MJW. A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology. In 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 191-194. (2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022). doi: 10.1109/BCICTS53451.2022.10051696

A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology

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