A 280 GHz InP HBT Direct-Conversion Receiver with 10.8 dB NF

  • Utku Soylu
  • , Amirreza Alizadeh
  • , Munkyo Seo
  • , Mark J.W. Rodwell

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

We report a fully integrated 280 GHz direct- conversion receiver in 250 nm InP HBT technology. The receiver has > 17 dB conversion gain over 264-297 GHz, consumes 455 mW, and has 10.8-11.6 dB DSB noise figure over 261-300 GHz. Its -3 dB bandwidth is 16.5 GHz, while its -6 dB bandwidth is 34.5 GHz. The local oscillator is generated by an internal 8:1 active frequency multiplier. To the authors' knowledge, the IC demonstrates record noise performance for an integrated receiver operating near 280 GHz.

Original languageEnglish
Title of host publication2023 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2023
EditorsJennifer Kitchen, Steven Turner
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages85-88
Number of pages4
ISBN (Electronic)9798350321227
DOIs
StatePublished - 2023
Externally publishedYes
Event2023 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2023 - San Diego, United States
Duration: 11 Jun 202313 Jun 2023

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Volume2023-June
ISSN (Print)1529-2517

Conference

Conference2023 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2023
Country/TerritoryUnited States
CitySan Diego
Period11/06/2313/06/23

Keywords

  • direct conversion
  • double heterojunction bipolar transistor (DHBT)
  • H-band
  • indium phosphide (InP)
  • millimeter wave
  • noise figure (NF)

Fingerprint

Dive into the research topics of 'A 280 GHz InP HBT Direct-Conversion Receiver with 10.8 dB NF'. Together they form a unique fingerprint.

Cite this