@inproceedings{d7e5c92ef2a442c493a25d3c49fd1d8c,
title = "A 280 GHz InP HBT Direct-Conversion Receiver with 10.8 dB NF",
abstract = "We report a fully integrated 280 GHz direct- conversion receiver in 250 nm InP HBT technology. The receiver has > 17 dB conversion gain over 264-297 GHz, consumes 455 mW, and has 10.8-11.6 dB DSB noise figure over 261-300 GHz. Its -3 dB bandwidth is 16.5 GHz, while its -6 dB bandwidth is 34.5 GHz. The local oscillator is generated by an internal 8:1 active frequency multiplier. To the authors' knowledge, the IC demonstrates record noise performance for an integrated receiver operating near 280 GHz.",
keywords = "direct conversion, double heterojunction bipolar transistor (DHBT), H-band, indium phosphide (InP), millimeter wave, noise figure (NF)",
author = "Utku Soylu and Amirreza Alizadeh and Munkyo Seo and Rodwell, \{Mark J.W.\}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2023 ; Conference date: 11-06-2023 Through 13-06-2023",
year = "2023",
doi = "10.1109/RFIC54547.2023.10186196",
language = "English",
series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "85--88",
editor = "Jennifer Kitchen and Steven Turner",
booktitle = "2023 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2023",
}