A 18.05 ppm/oC, 38.5 µW Bandgap Reference Based on Weak Inversion Region Operation Design

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Abstract

This paper presents a low-power, low-noise, and high-performance bandgap reference with a high-order compensation technique by using MOSFETs operating in the sub-threshold region. This work offers a temperature coefficient of 18.05 ppm/oC and a PSRR of -52 dB while consuming 35 µA current from an external power supply of 1.1 V. The BGR offers 1.26 nV/sqrt(Hz) of noise with an employed low pass filter at the output. The proposed bandgap reference is analyzed and implemented in the 40 nm CMOS SOI process, and the occupied die area is 142 µm × 374 µm.

Original languageEnglish
Title of host publicationICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665488235
DOIs
StatePublished - 2022
Event29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022 - Glasgow, United Kingdom
Duration: 24 Oct 202226 Oct 2022

Publication series

NameICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings

Conference

Conference29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022
Country/TerritoryUnited Kingdom
CityGlasgow
Period24/10/2226/10/22

Keywords

  • Bandgap reference
  • low-noise
  • low-power
  • temperature coefficient

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