TY - GEN
T1 - A 18.05 ppm/oC, 38.5 µW Bandgap Reference Based on Weak Inversion Region Operation Design
AU - Asl, S. Ali Hosseini
AU - Lee, Kang Yoon
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This paper presents a low-power, low-noise, and high-performance bandgap reference with a high-order compensation technique by using MOSFETs operating in the sub-threshold region. This work offers a temperature coefficient of 18.05 ppm/oC and a PSRR of -52 dB while consuming 35 µA current from an external power supply of 1.1 V. The BGR offers 1.26 nV/sqrt(Hz) of noise with an employed low pass filter at the output. The proposed bandgap reference is analyzed and implemented in the 40 nm CMOS SOI process, and the occupied die area is 142 µm × 374 µm.
AB - This paper presents a low-power, low-noise, and high-performance bandgap reference with a high-order compensation technique by using MOSFETs operating in the sub-threshold region. This work offers a temperature coefficient of 18.05 ppm/oC and a PSRR of -52 dB while consuming 35 µA current from an external power supply of 1.1 V. The BGR offers 1.26 nV/sqrt(Hz) of noise with an employed low pass filter at the output. The proposed bandgap reference is analyzed and implemented in the 40 nm CMOS SOI process, and the occupied die area is 142 µm × 374 µm.
KW - Bandgap reference
KW - low-noise
KW - low-power
KW - temperature coefficient
UR - https://www.scopus.com/pages/publications/85145346410
U2 - 10.1109/ICECS202256217.2022.9970903
DO - 10.1109/ICECS202256217.2022.9970903
M3 - Conference contribution
AN - SCOPUS:85145346410
T3 - ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings
BT - ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022
Y2 - 24 October 2022 through 26 October 2022
ER -