A 150 GHz amplifier with 8 dB gain and +6 dBm Psat in digital 65 nm CMOS using dummy-prefilled microstrip lines

Munkyo Seo; Basanth Jagannathan; John Pekarik; Mark J.W. Rodwell

doi:10.1109/JSSC.2009.2032273

A 150 GHz amplifier with 8 dB gain and +6 dBm P_sat in digital 65 nm CMOS using dummy-prefilled microstrip lines

Munkyo Seo, Basanth Jagannathan, John Pekarik, Mark J.W. Rodwell

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

A 150 GHz amplifier in digital 65 nm CMOS process is presented. Matching loss is reduced and bandwidth extended by simplistic topology: no dc-block capacitor, shunt-only tuning and radial stubs for ac ground. Dummy-prefilled microstrip lines, with explicit yet efficient dummy modeling, are used as a compact, density-rule compliant matching element. Transistor layout with parallel gate feed yields 5.7 dB of MSG at 150 GHz. Measurement shows the amplifier exhibits 8.2 dB of gain, 6.3 dBm of P_ast 1.5 dBm of P _1dB and 27 GHz of 3 dB bandwidth, while consuming 25.5 mW at 1.1 V. The dummy-prefilled microstrip line exhibits Q_TL ≅ up to 200 GHz.

Original language	English
Article number	5342355
Pages (from-to)	3410-3421
Number of pages	12
Journal	IEEE Journal of Solid-State Circuits
Volume	44
Issue number	12
DOIs	https://doi.org/10.1109/JSSC.2009.2032273
State	Published - Dec 2009
Externally published	Yes

Keywords

150 GHz amplifier
65 nm
Amplifiers
CMOS millimeter-wave integrated circuits
Dummy modeling
Matching loss
Metal filling
Millimeter-wave integrated circuits
MMICs
Pattern density rules
Silicon
Transmission lines

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10.1109/JSSC.2009.2032273

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title = "A 150 GHz amplifier with 8 dB gain and +6 dBm Psat in digital 65 nm CMOS using dummy-prefilled microstrip lines",

abstract = "A 150 GHz amplifier in digital 65 nm CMOS process is presented. Matching loss is reduced and bandwidth extended by simplistic topology: no dc-block capacitor, shunt-only tuning and radial stubs for ac ground. Dummy-prefilled microstrip lines, with explicit yet efficient dummy modeling, are used as a compact, density-rule compliant matching element. Transistor layout with parallel gate feed yields 5.7 dB of MSG at 150 GHz. Measurement shows the amplifier exhibits 8.2 dB of gain, 6.3 dBm of Past 1.5 dBm of P 1dB and 27 GHz of 3 dB bandwidth, while consuming 25.5 mW at 1.1 V. The dummy-prefilled microstrip line exhibits QTL ≅ up to 200 GHz.",

keywords = "150 GHz amplifier, 65 nm, Amplifiers, CMOS millimeter-wave integrated circuits, Dummy modeling, Matching loss, Metal filling, Millimeter-wave integrated circuits, MMICs, Pattern density rules, Silicon, Transmission lines",

author = "Munkyo Seo and Basanth Jagannathan and John Pekarik and Rodwell, \{Mark J.W.\}",

year = "2009",

month = dec,

doi = "10.1109/JSSC.2009.2032273",

language = "English",

volume = "44",

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journal = "IEEE Journal of Solid-State Circuits",

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AU - Seo, Munkyo

AU - Jagannathan, Basanth

AU - Pekarik, John

AU - Rodwell, Mark J.W.

PY - 2009/12

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N2 - A 150 GHz amplifier in digital 65 nm CMOS process is presented. Matching loss is reduced and bandwidth extended by simplistic topology: no dc-block capacitor, shunt-only tuning and radial stubs for ac ground. Dummy-prefilled microstrip lines, with explicit yet efficient dummy modeling, are used as a compact, density-rule compliant matching element. Transistor layout with parallel gate feed yields 5.7 dB of MSG at 150 GHz. Measurement shows the amplifier exhibits 8.2 dB of gain, 6.3 dBm of Past 1.5 dBm of P 1dB and 27 GHz of 3 dB bandwidth, while consuming 25.5 mW at 1.1 V. The dummy-prefilled microstrip line exhibits QTL ≅ up to 200 GHz.

AB - A 150 GHz amplifier in digital 65 nm CMOS process is presented. Matching loss is reduced and bandwidth extended by simplistic topology: no dc-block capacitor, shunt-only tuning and radial stubs for ac ground. Dummy-prefilled microstrip lines, with explicit yet efficient dummy modeling, are used as a compact, density-rule compliant matching element. Transistor layout with parallel gate feed yields 5.7 dB of MSG at 150 GHz. Measurement shows the amplifier exhibits 8.2 dB of gain, 6.3 dBm of Past 1.5 dBm of P 1dB and 27 GHz of 3 dB bandwidth, while consuming 25.5 mW at 1.1 V. The dummy-prefilled microstrip line exhibits QTL ≅ up to 200 GHz.

KW - 150 GHz amplifier

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KW - Dummy modeling

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KW - Millimeter-wave integrated circuits

KW - MMICs

KW - Pattern density rules

KW - Silicon

KW - Transmission lines

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A 150 GHz amplifier with 8 dB gain and +6 dBm P_sat in digital 65 nm CMOS using dummy-prefilled microstrip lines

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