@inproceedings{f1e77296669045c0bcf819f3938695c1,
title = "A 130 nm InP HBT integrated circuit technology for THz electronics",
abstract = "A 130 nm InP HBT IC technology has been developed capable of circuit demonstrations at > 600 GHz. Transistors demonstrate RF figures-of-merit ft > 500 GHz and fmax > 1 THz. The HBTs support high current densities > 25 mA/μm2 with a common-emitter breakdown voltage BVceo = 3.5 V. The technology includes a multi-level thin-film wiring environment capable of low-loss THz signal routing and high integration density. A large-signal HBT model has been developed capable of accurately predicting circuit performance at THz frequencies. Circuit demonstrations include fundamental oscillators and amplifiers operating at > 600 GHz as well as integrated transmitter and receiver circuits.",
author = "M. Urteaga and J. Hacker and Z. Griffith and A. Young and R. Pierson and P. Rowell and M. Seo and Rodwell, \{M. J.W.\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",
year = "2017",
month = jan,
day = "31",
doi = "10.1109/IEDM.2016.7838503",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "29.2.1--29.2.4",
booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",
}