A 12-Gb/s dual-channel transceiver for CMOS image sensor systems

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We propose a dual-channel interface architecture that allocates high and low transition-density bit streams to two separate channels. The transmitter utilizes the stacked drivers with charge-recycling to reduce the power consumption. The DC-coupled receiver front-end circuits deal with the common-mode level variations and compensate for the channel loss. The tracked oversampling CDR which realizes fast lock acquisition below 1 baud period and low logic latency is shared by the two channels. Fabricated in a 65-nm low-power CMOS technology, the dual-channel transceiver achieves 12-Gb/s data rate while the transmitter consumes 20.43mW from a 1.2V power supply.

Original languageEnglish
Title of host publicationESSCIRC 2016
Subtitle of host publication42nd European Solid-State Circuits Conference
PublisherIEEE Computer Society
Pages293-296
Number of pages4
ISBN (Electronic)9781509029723
DOIs
StatePublished - 18 Oct 2016
Event42nd European Solid-State Circuits Conference, ESSCIRC 2016 - Lausanne, Switzerland
Duration: 12 Sep 201615 Sep 2016

Publication series

NameEuropean Solid-State Circuits Conference
Volume2016-October
ISSN (Print)1930-8833

Conference

Conference42nd European Solid-State Circuits Conference, ESSCIRC 2016
Country/TerritorySwitzerland
CityLausanne
Period12/09/1615/09/16

Keywords

  • Charge-recycling
  • CMOS Image Sensor (CIS) System
  • Dual-channel
  • Shared CDR
  • Transceiver

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