A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines

Munkyo Seo; Basanth Jagannathan; Corrado Carta; John Pekarik; Luis Chen; C. Patrick Yue; Mark Rodwell

doi:10.1109/ISSCC.2009.4977519

A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines

Munkyo Seo
, Basanth Jagannathan
, Corrado Carta
, John Pekarik
, Luis Chen
, C. Patrick Yue
, Mark Rodwell

University of California at Santa Barbara
IBM

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

68 Scopus citations

Original language	English
Title of host publication	2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	484-485
Number of pages	2
ISBN (Print)	1424434580, 9781424434589
DOIs	https://doi.org/10.1109/ISSCC.2009.4977519
State	Published - 2009
Externally published	Yes
Event	56th IEEE International Solid-State Circuits Conference, ISSCC 2009 - San Francisco, CA, United States Duration: 8 Feb 2009 → 12 Feb 2009

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	52
ISSN (Print)	0193-6530

Conference

Conference	56th IEEE International Solid-State Circuits Conference, ISSCC 2009
Country/Territory	United States
City	San Francisco, CA
Period	8/02/09 → 12/02/09

Access to Document

10.1109/ISSCC.2009.4977519

Cite this

Seo, M., Jagannathan, B., Carta, C., Pekarik, J., Chen, L., Yue, C. P., & Rodwell, M. (2009). A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines. In 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009 (pp. 484-485). Article 4977519 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 52). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2009.4977519

Seo, Munkyo ; Jagannathan, Basanth ; Carta, Corrado et al. / A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines. 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009. Institute of Electrical and Electronics Engineers Inc., 2009. pp. 484-485 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

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title = "A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines",

author = "Munkyo Seo and Basanth Jagannathan and Corrado Carta and John Pekarik and Luis Chen and Yue, \{C. Patrick\} and Mark Rodwell",

year = "2009",

doi = "10.1109/ISSCC.2009.4977519",

language = "English",

isbn = "1424434580",

series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "484--485",

booktitle = "2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009",

note = "56th IEEE International Solid-State Circuits Conference, ISSCC 2009 ; Conference date: 08-02-2009 Through 12-02-2009",

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Seo, M, Jagannathan, B, Carta, C, Pekarik, J, Chen, L, Yue, CP & Rodwell, M 2009, A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines. in 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009., 4977519, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 52, Institute of Electrical and Electronics Engineers Inc., pp. 484-485, 56th IEEE International Solid-State Circuits Conference, ISSCC 2009, San Francisco, CA, United States, 8/02/09. https://doi.org/10.1109/ISSCC.2009.4977519

A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines. / Seo, Munkyo; Jagannathan, Basanth; Carta, Corrado et al.
2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009. Institute of Electrical and Electronics Engineers Inc., 2009. p. 484-485 4977519 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 52).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines

AU - Seo, Munkyo

AU - Jagannathan, Basanth

AU - Carta, Corrado

AU - Pekarik, John

AU - Chen, Luis

AU - Yue, C. Patrick

AU - Rodwell, Mark

PY - 2009

Y1 - 2009

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DO - 10.1109/ISSCC.2009.4977519

M3 - Conference contribution

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SN - 1424434580

SN - 9781424434589

T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SP - 484

EP - 485

BT - 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 56th IEEE International Solid-State Circuits Conference, ISSCC 2009

Y2 - 8 February 2009 through 12 February 2009

ER -

Seo M, Jagannathan B, Carta C, Pekarik J, Chen L, Yue CP et al. A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines. In 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009. Institute of Electrical and Electronics Engineers Inc. 2009. p. 484-485. 4977519. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC.2009.4977519

A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines

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