A 0.75V CMOS image sensor using time-based readout circuit

Kunhee Cho; Dongmyung Lee; Jeonghwan Lee; Gunhee Han

A 0.75V CMOS image sensor using time-based readout circuit

Kunhee Cho, Dongmyung Lee, Jeonghwan Lee, Gunhee Han

Yonsei University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38% in 3.4-μm pixel pitch.

Original language	English
Title of host publication	2009 Symposium on VLSI Circuits
Pages	178-179
Number of pages	2
State	Published - 2009
Externally published	Yes
Event	2009 Symposium on VLSI Circuits - Kyoto, Japan Duration: 16 Jun 2009 → 18 Jun 2009

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Conference

Conference	2009 Symposium on VLSI Circuits
Country/Territory	Japan
City	Kyoto
Period	16/06/09 → 18/06/09

Cite this

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title = "A 0.75V CMOS image sensor using time-based readout circuit",

abstract = "This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38\% in 3.4-μm pixel pitch.",

author = "Kunhee Cho and Dongmyung Lee and Jeonghwan Lee and Gunhee Han",

year = "2009",

language = "English",

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series = "IEEE Symposium on VLSI Circuits, Digest of Technical Papers",

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TY - GEN

T1 - A 0.75V CMOS image sensor using time-based readout circuit

AU - Cho, Kunhee

AU - Lee, Dongmyung

AU - Lee, Jeonghwan

AU - Han, Gunhee

PY - 2009

Y1 - 2009

N2 - This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38% in 3.4-μm pixel pitch.

AB - This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38% in 3.4-μm pixel pitch.

UR - https://www.scopus.com/pages/publications/70449396723

M3 - Conference contribution

AN - SCOPUS:70449396723

SN - 9784863480018

T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers

SP - 178

EP - 179

BT - 2009 Symposium on VLSI Circuits

T2 - 2009 Symposium on VLSI Circuits

Y2 - 16 June 2009 through 18 June 2009

ER -

A 0.75V CMOS image sensor using time-based readout circuit

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Publication series

Conference

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