98-dB Gain Class-AB OTA with 100 pF Load Capacitor in 180-nm Digital CMOS Process

Seyed Mahmoud Anisheh; Hamed Abbasizadeh; Hossein Shamsi; Chitra Dadkhah; Kang Yoon Lee

doi:10.1109/ACCESS.2019.2896089

98-dB Gain Class-AB OTA with 100 pF Load Capacitor in 180-nm Digital CMOS Process

Seyed Mahmoud Anisheh
, Hamed Abbasizadeh
, Hossein Shamsi
, Chitra Dadkhah
, Kang Yoon Lee

K.N. Toosi University of Technology
University of Connecticut
Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

In this paper, a new two-stage class-AB operational trans-conductance amplifier (OTA) is proposed. Using active loads in the first stage and improved recycling structure, the effective trans-conductance of the first stage is increased. The nonlinear current mirrors boost the current of the second stage in the slewing mode, leading to the increase of the slew rate (SR). Exploiting the multi-path scheme and increasing the effective trans-conductance cause the OTA DC-gain to be enhanced. The proposed OTA has been fabricated using 1P6M 180-nm CMOS technology under 1.8 V supply voltage. The OTA exhibits 98 dB DC-gain and 21 MHz unity-gain bandwidth with a 100 pF capacitive load, consuming 3 mW from 1.8 V supply voltage.

Original language	English
Article number	8638945
Pages (from-to)	17772-17779
Number of pages	8
Journal	IEEE Access
Volume	7
DOIs	https://doi.org/10.1109/ACCESS.2019.2896089
State	Published - 2019
Externally published	Yes

Keywords

Class-AB OTA
DC-gain
multi-path scheme
nonlinear current mirror
trans-conductance

Access to Document

10.1109/ACCESS.2019.2896089

Cite this

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title = "98-dB Gain Class-AB OTA with 100 pF Load Capacitor in 180-nm Digital CMOS Process",

abstract = "In this paper, a new two-stage class-AB operational trans-conductance amplifier (OTA) is proposed. Using active loads in the first stage and improved recycling structure, the effective trans-conductance of the first stage is increased. The nonlinear current mirrors boost the current of the second stage in the slewing mode, leading to the increase of the slew rate (SR). Exploiting the multi-path scheme and increasing the effective trans-conductance cause the OTA DC-gain to be enhanced. The proposed OTA has been fabricated using 1P6M 180-nm CMOS technology under 1.8 V supply voltage. The OTA exhibits 98 dB DC-gain and 21 MHz unity-gain bandwidth with a 100 pF capacitive load, consuming 3 mW from 1.8 V supply voltage.",

keywords = "Class-AB OTA, DC-gain, multi-path scheme, nonlinear current mirror, trans-conductance",

author = "Anisheh, \{Seyed Mahmoud\} and Hamed Abbasizadeh and Hossein Shamsi and Chitra Dadkhah and Lee, \{Kang Yoon\}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2019",

doi = "10.1109/ACCESS.2019.2896089",

language = "English",

volume = "7",

pages = "17772--17779",

journal = "IEEE Access",

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T1 - 98-dB Gain Class-AB OTA with 100 pF Load Capacitor in 180-nm Digital CMOS Process

AU - Anisheh, Seyed Mahmoud

AU - Abbasizadeh, Hamed

AU - Shamsi, Hossein

AU - Dadkhah, Chitra

AU - Lee, Kang Yoon

PY - 2019

Y1 - 2019

N2 - In this paper, a new two-stage class-AB operational trans-conductance amplifier (OTA) is proposed. Using active loads in the first stage and improved recycling structure, the effective trans-conductance of the first stage is increased. The nonlinear current mirrors boost the current of the second stage in the slewing mode, leading to the increase of the slew rate (SR). Exploiting the multi-path scheme and increasing the effective trans-conductance cause the OTA DC-gain to be enhanced. The proposed OTA has been fabricated using 1P6M 180-nm CMOS technology under 1.8 V supply voltage. The OTA exhibits 98 dB DC-gain and 21 MHz unity-gain bandwidth with a 100 pF capacitive load, consuming 3 mW from 1.8 V supply voltage.

AB - In this paper, a new two-stage class-AB operational trans-conductance amplifier (OTA) is proposed. Using active loads in the first stage and improved recycling structure, the effective trans-conductance of the first stage is increased. The nonlinear current mirrors boost the current of the second stage in the slewing mode, leading to the increase of the slew rate (SR). Exploiting the multi-path scheme and increasing the effective trans-conductance cause the OTA DC-gain to be enhanced. The proposed OTA has been fabricated using 1P6M 180-nm CMOS technology under 1.8 V supply voltage. The OTA exhibits 98 dB DC-gain and 21 MHz unity-gain bandwidth with a 100 pF capacitive load, consuming 3 mW from 1.8 V supply voltage.

KW - Class-AB OTA

KW - DC-gain

KW - multi-path scheme

KW - nonlinear current mirror

KW - trans-conductance

UR - https://www.scopus.com/pages/publications/85061694953

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DO - 10.1109/ACCESS.2019.2896089

M3 - Article

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EP - 17779

JO - IEEE Access

JF - IEEE Access

M1 - 8638945

ER -

98-dB Gain Class-AB OTA with 100 pF Load Capacitor in 180-nm Digital CMOS Process

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Keywords

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