8-W 2-Stage GaN Doherty Power Amplifier Module on 7 × 7 QFN for the 5G N78 Band

Sooncheol Bae; Kuhyeon Kwon; Hyeongjin Jeon; Young Chan Choi; Soohyun Bin; Kyungdong Bae; Hyunuk Kang; Woojin Choi; Youngyun Woo; Youngoo Yang

doi:10.3390/electronics14122398

8-W 2-Stage GaN Doherty Power Amplifier Module on 7 × 7 QFN for the 5G N78 Band

Sooncheol Bae
, Kuhyeon Kwon
, Hyeongjin Jeon
, Young Chan Choi
, Soohyun Bin
, Kyungdong Bae
, Hyunuk Kang
, Woojin Choi
, Youngyun Woo
, Youngoo Yang

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a 2-stage GaN Doherty power amplifier module (DPAM) on a compact (Formula presented.) quad flat no-lead (QFN) package, designed for the needs of 5G massive MIMO base transceiver systems. The interstage and input matching networks employ high-quality factor integrated passive devices (IPDs) to achieve a small form factor. This multi-chip module consists of three GaN-HEMT bare dies used for the driver stage, carrier amplifier, and peaking amplifier. Additionally, two IPD dies are included for the interstage and input matching networks. The external load network is developed using a printed circuit board (PCB). Utilizing a 5G NR signal of 100 MHz bandwidth and a 9.3 dB PAPR within the 3.4–3.8 GHz band, the developed DPAM demonstrated a power gain exceeding 26.8 dB and a power-added efficiency (PAE) greater than 37.8% at a 39 dBm average output power.

Original language	English
Article number	2398
Journal	Electronics (Switzerland)
Volume	14
Issue number	12
DOIs	https://doi.org/10.3390/electronics14122398
State	Published - Jun 2025
Externally published	Yes

Keywords

5G
Doherty power amplifier
MIMO
QFN
integrated passive device
multi-chip module

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10.3390/electronics14122398

Cite this

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title = "8-W 2-Stage GaN Doherty Power Amplifier Module on 7 × 7 QFN for the 5G N78 Band",

abstract = "This paper presents a 2-stage GaN Doherty power amplifier module (DPAM) on a compact (Formula presented.) quad flat no-lead (QFN) package, designed for the needs of 5G massive MIMO base transceiver systems. The interstage and input matching networks employ high-quality factor integrated passive devices (IPDs) to achieve a small form factor. This multi-chip module consists of three GaN-HEMT bare dies used for the driver stage, carrier amplifier, and peaking amplifier. Additionally, two IPD dies are included for the interstage and input matching networks. The external load network is developed using a printed circuit board (PCB). Utilizing a 5G NR signal of 100 MHz bandwidth and a 9.3 dB PAPR within the 3.4–3.8 GHz band, the developed DPAM demonstrated a power gain exceeding 26.8 dB and a power-added efficiency (PAE) greater than 37.8\% at a 39 dBm average output power.",

keywords = "5G, Doherty power amplifier, MIMO, QFN, integrated passive device, multi-chip module",

author = "Sooncheol Bae and Kuhyeon Kwon and Hyeongjin Jeon and Choi, \{Young Chan\} and Soohyun Bin and Kyungdong Bae and Hyunuk Kang and Woojin Choi and Youngyun Woo and Youngoo Yang",

note = "Publisher Copyright: {\textcopyright} 2025 by the authors.",

year = "2025",

month = jun,

doi = "10.3390/electronics14122398",

language = "English",

volume = "14",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "12",

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T1 - 8-W 2-Stage GaN Doherty Power Amplifier Module on 7 × 7 QFN for the 5G N78 Band

AU - Bae, Sooncheol

AU - Kwon, Kuhyeon

AU - Jeon, Hyeongjin

AU - Choi, Young Chan

AU - Bin, Soohyun

AU - Bae, Kyungdong

AU - Kang, Hyunuk

AU - Choi, Woojin

AU - Woo, Youngyun

AU - Yang, Youngoo

PY - 2025/6

Y1 - 2025/6

N2 - This paper presents a 2-stage GaN Doherty power amplifier module (DPAM) on a compact (Formula presented.) quad flat no-lead (QFN) package, designed for the needs of 5G massive MIMO base transceiver systems. The interstage and input matching networks employ high-quality factor integrated passive devices (IPDs) to achieve a small form factor. This multi-chip module consists of three GaN-HEMT bare dies used for the driver stage, carrier amplifier, and peaking amplifier. Additionally, two IPD dies are included for the interstage and input matching networks. The external load network is developed using a printed circuit board (PCB). Utilizing a 5G NR signal of 100 MHz bandwidth and a 9.3 dB PAPR within the 3.4–3.8 GHz band, the developed DPAM demonstrated a power gain exceeding 26.8 dB and a power-added efficiency (PAE) greater than 37.8% at a 39 dBm average output power.

AB - This paper presents a 2-stage GaN Doherty power amplifier module (DPAM) on a compact (Formula presented.) quad flat no-lead (QFN) package, designed for the needs of 5G massive MIMO base transceiver systems. The interstage and input matching networks employ high-quality factor integrated passive devices (IPDs) to achieve a small form factor. This multi-chip module consists of three GaN-HEMT bare dies used for the driver stage, carrier amplifier, and peaking amplifier. Additionally, two IPD dies are included for the interstage and input matching networks. The external load network is developed using a printed circuit board (PCB). Utilizing a 5G NR signal of 100 MHz bandwidth and a 9.3 dB PAPR within the 3.4–3.8 GHz band, the developed DPAM demonstrated a power gain exceeding 26.8 dB and a power-added efficiency (PAE) greater than 37.8% at a 39 dBm average output power.

KW - 5G

KW - Doherty power amplifier

KW - MIMO

KW - QFN

KW - integrated passive device

KW - multi-chip module

UR - https://www.scopus.com/pages/publications/105008995509

U2 - 10.3390/electronics14122398

DO - 10.3390/electronics14122398

M3 - Article

AN - SCOPUS:105008995509

SN - 2079-9292

VL - 14

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 12

M1 - 2398

ER -

8-W 2-Stage GaN Doherty Power Amplifier Module on 7 × 7 QFN for the 5G N78 Band

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Keywords

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