500 W Three-way GaN Doherty Power Amplifier for Sub-6 GHz 5G New Radio Base Transceiver Systems

  • Hyunuk Kang
  • , Woojin Choi
  • , Inan Kim
  • , Dongoo Lee
  • , Youngoo Yang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a three-way Doherty power amplifier (DPA) using a broadband load network for the wideband 5G new radio (NR) signal. The broadband load network was proposed for bandwidth extension using a 180° quasi-lumped transmission line (TL) including the internal components of a high-power packaged transistor and the optimized impedance transformation ratio (ITR) for each section of the load network. The proposed three-way DPA was designed using 200 W GaN-HEMTs for the carrier and two peaking amplifiers at a frequency range from 3.6 to 3.8 GHz. For a two-carrier 5G NR signal with a signal bandwidth of 200 MHz and a peak-to-average power ratio (PAPR) of 9.5 dB, the implemented DPA exhibited a drain efficiency (DE) of 37.7% and an adjacent channel leakage power ratio (ACLR) of -44.2 dBc after a digital pre-distortion (DPD) at an average output power of 47.5 dBm.

Original languageEnglish
Title of host publication2020 50th European Microwave Conference, EuMC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages312-315
Number of pages4
ISBN (Electronic)9782874870590
DOIs
StatePublished - 12 Jan 2021
Event50th European Microwave Conference, EuMC 2020 - Utrecht, Netherlands
Duration: 12 Jan 202114 Jan 2021

Publication series

Name2020 50th European Microwave Conference, EuMC 2020

Conference

Conference50th European Microwave Conference, EuMC 2020
Country/TerritoryNetherlands
CityUtrecht
Period12/01/2114/01/21

Keywords

  • 5G new radio
  • broadband load network
  • GaN HEMT
  • Three-way Doherty power amplifier

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