2.08 GHz GaN Doherty Rectifier with 20 dB Input Dynamic Range

Yoonjung Lee, Sooncheol Bae, Soohyun Bin, Young Chan Choi, Wonseob Lim, Youngoo Yang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, a 2.08 GHz Doherty rectifier using 0.25 μm Gallium nitride (GaN) HEMT process is presented with a dynamic input power distribution network (DIPD). The proposed rectifier consists of two rectifiers in parallel using 5x50 μm cells and 8x75 μm cells to have wide input dynamic range at the high input power level. Compact input matching networks for DIPD according to the input power is designed without an offset line. To verify the proposed method, a hybrid Doherty rectifier was designed and implemented. The measured results show the peak RF-to-dc power conversion efficiency (PCE) of 64.2-69.5% at the input power level of 32-38 dBm and the extended dynamic range (DR) with a PCE of better than 50% of 20 dB (from 21 to 41 dBm) with a dc load of 800 Ω.

Original languageEnglish
Title of host publication2024 54th European Microwave Conference, EuMC 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages461-464
Number of pages4
ISBN (Electronic)9782874870774
DOIs
StatePublished - 2024
Externally publishedYes
Event54th European Microwave Conference, EuMC 2024 - Paris, France
Duration: 24 Sep 202426 Sep 2024

Publication series

Name2024 54th European Microwave Conference, EuMC 2024

Conference

Conference54th European Microwave Conference, EuMC 2024
Country/TerritoryFrance
CityParis
Period24/09/2426/09/24

Keywords

  • Dynamic input power distribution
  • GaN Doherty rectifier
  • RF rectifier
  • RF-to-dc power conversion efficiency
  • wireless power transfer (WPT)

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