200 GHz Low Noise Amplifiers in 250 nm InP HBT Technology

Utku Soylu; Ahmed S.H. Ahmed; Munkyo Seo; Ali Farid; Mark Rodwell

doi:10.23919/EuMIC50153.2022.9784010

200 GHz Low Noise Amplifiers in 250 nm InP HBT Technology

Utku Soylu, Ahmed S.H. Ahmed, Munkyo Seo, Ali Farid, Mark Rodwell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

We report 200 GHz InP DHBT low noise amplifiers in common base (CB) and common emitter (CE) topologies, together with a design procedure based on minimum noise measure. The CB design shows 7.4±0.7 dB noise figure over 196-216 GHz, 14.5 dB gain and -21.1 dBm Pin1dB at 200 GHz, and dissipates 9.2 mW, while the CE design shows 7.2±0.4 dB noise figure over 196-216 GHz, 13 dB gain and -18.2 dBm Pin1dB at 200 GHz, and dissipates 19.22 mW. To the authors' knowledge, these results demonstrate record noise figure for bipolar transistor amplifiers operating near 200 GHz.

Original language	English
Title of host publication	EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	129-132
Number of pages	4
ISBN (Electronic)	9782874870644
DOIs	https://doi.org/10.23919/EuMIC50153.2022.9784010
State	Published - 2021
Externally published	Yes
Event	16th European Microwave Integrated Circuits Conference, EuMIC 2021 - London, United Kingdom Duration: 3 Apr 2022 → 4 Apr 2022

Publication series

Name	EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference

Conference

Conference	16th European Microwave Integrated Circuits Conference, EuMIC 2021
Country/Territory	United Kingdom
City	London
Period	3/04/22 → 4/04/22

Keywords

double heterojunction bipolar transistor (DHBT)
G-band
indium phosphide (InP)
low noise amplifier (LNA)
millimeter wave
noise figure (NF)
noise measure (M)

Access to Document

10.23919/EuMIC50153.2022.9784010

Cite this

Soylu, U., Ahmed, A. S. H., Seo, M., Farid, A., & Rodwell, M. (2021). 200 GHz Low Noise Amplifiers in 250 nm InP HBT Technology. In EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference (pp. 129-132). (EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/EuMIC50153.2022.9784010

@inproceedings{a0b0cf1a59a74e63b8d6026ceb613ffa,

title = "200 GHz Low Noise Amplifiers in 250 nm InP HBT Technology",

abstract = "We report 200 GHz InP DHBT low noise amplifiers in common base (CB) and common emitter (CE) topologies, together with a design procedure based on minimum noise measure. The CB design shows 7.4±0.7 dB noise figure over 196-216 GHz, 14.5 dB gain and -21.1 dBm Pin1dB at 200 GHz, and dissipates 9.2 mW, while the CE design shows 7.2±0.4 dB noise figure over 196-216 GHz, 13 dB gain and -18.2 dBm Pin1dB at 200 GHz, and dissipates 19.22 mW. To the authors' knowledge, these results demonstrate record noise figure for bipolar transistor amplifiers operating near 200 GHz.",

keywords = "double heterojunction bipolar transistor (DHBT), G-band, indium phosphide (InP), low noise amplifier (LNA), millimeter wave, noise figure (NF), noise measure (M)",

author = "Utku Soylu and Ahmed, \{Ahmed S.H.\} and Munkyo Seo and Ali Farid and Mark Rodwell",

note = "Publisher Copyright: {\textcopyright} 2022 European Microwave Association (EuMA).; 16th European Microwave Integrated Circuits Conference, EuMIC 2021 ; Conference date: 03-04-2022 Through 04-04-2022",

year = "2021",

doi = "10.23919/EuMIC50153.2022.9784010",

language = "English",

series = "EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "129--132",

booktitle = "EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference",

}

Soylu, U, Ahmed, ASH, Seo, M, Farid, A & Rodwell, M 2021, 200 GHz Low Noise Amplifiers in 250 nm InP HBT Technology. in EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference. EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 129-132, 16th European Microwave Integrated Circuits Conference, EuMIC 2021, London, United Kingdom, 3/04/22. https://doi.org/10.23919/EuMIC50153.2022.9784010

200 GHz Low Noise Amplifiers in 250 nm InP HBT Technology. / Soylu, Utku; Ahmed, Ahmed S.H.; Seo, Munkyo et al.
EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2021. p. 129-132 (EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 200 GHz Low Noise Amplifiers in 250 nm InP HBT Technology

AU - Soylu, Utku

AU - Ahmed, Ahmed S.H.

AU - Seo, Munkyo

AU - Farid, Ali

AU - Rodwell, Mark

PY - 2021

Y1 - 2021

N2 - We report 200 GHz InP DHBT low noise amplifiers in common base (CB) and common emitter (CE) topologies, together with a design procedure based on minimum noise measure. The CB design shows 7.4±0.7 dB noise figure over 196-216 GHz, 14.5 dB gain and -21.1 dBm Pin1dB at 200 GHz, and dissipates 9.2 mW, while the CE design shows 7.2±0.4 dB noise figure over 196-216 GHz, 13 dB gain and -18.2 dBm Pin1dB at 200 GHz, and dissipates 19.22 mW. To the authors' knowledge, these results demonstrate record noise figure for bipolar transistor amplifiers operating near 200 GHz.

AB - We report 200 GHz InP DHBT low noise amplifiers in common base (CB) and common emitter (CE) topologies, together with a design procedure based on minimum noise measure. The CB design shows 7.4±0.7 dB noise figure over 196-216 GHz, 14.5 dB gain and -21.1 dBm Pin1dB at 200 GHz, and dissipates 9.2 mW, while the CE design shows 7.2±0.4 dB noise figure over 196-216 GHz, 13 dB gain and -18.2 dBm Pin1dB at 200 GHz, and dissipates 19.22 mW. To the authors' knowledge, these results demonstrate record noise figure for bipolar transistor amplifiers operating near 200 GHz.

KW - double heterojunction bipolar transistor (DHBT)

KW - G-band

KW - indium phosphide (InP)

KW - low noise amplifier (LNA)

KW - millimeter wave

KW - noise figure (NF)

KW - noise measure (M)

UR - https://www.scopus.com/pages/publications/85132971004

U2 - 10.23919/EuMIC50153.2022.9784010

DO - 10.23919/EuMIC50153.2022.9784010

M3 - Conference contribution

AN - SCOPUS:85132971004

T3 - EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference

SP - 129

EP - 132

BT - EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th European Microwave Integrated Circuits Conference, EuMIC 2021

Y2 - 3 April 2022 through 4 April 2022

ER -

200 GHz Low Noise Amplifiers in 250 nm InP HBT Technology

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Keywords

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