1.6-ppm/°C Reference Voltage Generator with PSRR of -93dB based on Threshold Voltage Difference of LVT and SVT Devices

Behnam Samadpoor Rikan; Hamed Abbasizadeh; Reza E. Rad; Arash Hejazi; Kang Yoon Lee

doi:10.1109/ISOCC.2018.8649947

1.6-ppm/°C Reference Voltage Generator with PSRR of -93dB based on Threshold Voltage Difference of LVT and SVT Devices

Behnam Samadpoor Rikan
, Hamed Abbasizadeh
, Reza E. Rad
, Arash Hejazi
, Kang Yoon Lee

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper proposes a reference voltage generator structure based on the difference between the threshold voltages (Vth) of the standard threshold voltage (SVT) and low threshold voltage (LVT) transistors. The proposed structure does not apply any passive resistors or bipolar junction transistors (BJT). The reference generator is designed using a 55 nm (shrinked 65 nm) CMOS process and achieved a temperature coefficient (TC) of 1.6-ppm/°C over the -40°C to 85°C temperature ranges. The power supply rejection ratio (PSRR) for this structure is -93dB.

Original language	English
Title of host publication	Proceedings - International SoC Design Conference 2018, ISOCC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	60-61
Number of pages	2
ISBN (Electronic)	9781538679609
DOIs	https://doi.org/10.1109/ISOCC.2018.8649947
State	Published - 2 Jul 2018
Event	15th International SoC Design Conference, ISOCC 2018 - Daegu, Korea, Republic of Duration: 12 Nov 2018 → 15 Nov 2018

Publication series

Name	Proceedings - International SoC Design Conference 2018, ISOCC 2018

Conference

Conference	15th International SoC Design Conference, ISOCC 2018
Country/Territory	Korea, Republic of
City	Daegu
Period	12/11/18 → 15/11/18

Keywords

CMOS
LVT
PSRR
SVT
Voltage Generator

Access to Document

10.1109/ISOCC.2018.8649947

Cite this

Rikan, B. S., Abbasizadeh, H., Rad, R. E., Hejazi, A., & Lee, K. Y. (2018). 1.6-ppm/°C Reference Voltage Generator with PSRR of -93dB based on Threshold Voltage Difference of LVT and SVT Devices. In Proceedings - International SoC Design Conference 2018, ISOCC 2018 (pp. 60-61). Article 8649947 (Proceedings - International SoC Design Conference 2018, ISOCC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2018.8649947

Rikan, Behnam Samadpoor ; Abbasizadeh, Hamed ; Rad, Reza E. et al. / 1.6-ppm/°C Reference Voltage Generator with PSRR of -93dB based on Threshold Voltage Difference of LVT and SVT Devices. Proceedings - International SoC Design Conference 2018, ISOCC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 60-61 (Proceedings - International SoC Design Conference 2018, ISOCC 2018).

@inproceedings{49440c87443f456eaa745b54a68a4b2b,

title = "1.6-ppm/°C Reference Voltage Generator with PSRR of -93dB based on Threshold Voltage Difference of LVT and SVT Devices",

abstract = "This paper proposes a reference voltage generator structure based on the difference between the threshold voltages (Vth) of the standard threshold voltage (SVT) and low threshold voltage (LVT) transistors. The proposed structure does not apply any passive resistors or bipolar junction transistors (BJT). The reference generator is designed using a 55 nm (shrinked 65 nm) CMOS process and achieved a temperature coefficient (TC) of 1.6-ppm/°C over the -40°C to 85°C temperature ranges. The power supply rejection ratio (PSRR) for this structure is -93dB.",

keywords = "CMOS, LVT, PSRR, SVT, Voltage Generator",

author = "Rikan, \{Behnam Samadpoor\} and Hamed Abbasizadeh and Rad, \{Reza E.\} and Arash Hejazi and Lee, \{Kang Yoon\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 15th International SoC Design Conference, ISOCC 2018 ; Conference date: 12-11-2018 Through 15-11-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/ISOCC.2018.8649947",

language = "English",

series = "Proceedings - International SoC Design Conference 2018, ISOCC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "Proceedings - International SoC Design Conference 2018, ISOCC 2018",

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Rikan, BS, Abbasizadeh, H, Rad, RE, Hejazi, A & Lee, KY 2018, 1.6-ppm/°C Reference Voltage Generator with PSRR of -93dB based on Threshold Voltage Difference of LVT and SVT Devices. in Proceedings - International SoC Design Conference 2018, ISOCC 2018., 8649947, Proceedings - International SoC Design Conference 2018, ISOCC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 60-61, 15th International SoC Design Conference, ISOCC 2018, Daegu, Korea, Republic of, 12/11/18. https://doi.org/10.1109/ISOCC.2018.8649947

1.6-ppm/°C Reference Voltage Generator with PSRR of -93dB based on Threshold Voltage Difference of LVT and SVT Devices. / Rikan, Behnam Samadpoor; Abbasizadeh, Hamed; Rad, Reza E. et al.
Proceedings - International SoC Design Conference 2018, ISOCC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 60-61 8649947 (Proceedings - International SoC Design Conference 2018, ISOCC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Rikan, Behnam Samadpoor

AU - Abbasizadeh, Hamed

AU - Rad, Reza E.

AU - Hejazi, Arash

AU - Lee, Kang Yoon

PY - 2018/7/2

Y1 - 2018/7/2

N2 - This paper proposes a reference voltage generator structure based on the difference between the threshold voltages (Vth) of the standard threshold voltage (SVT) and low threshold voltage (LVT) transistors. The proposed structure does not apply any passive resistors or bipolar junction transistors (BJT). The reference generator is designed using a 55 nm (shrinked 65 nm) CMOS process and achieved a temperature coefficient (TC) of 1.6-ppm/°C over the -40°C to 85°C temperature ranges. The power supply rejection ratio (PSRR) for this structure is -93dB.

AB - This paper proposes a reference voltage generator structure based on the difference between the threshold voltages (Vth) of the standard threshold voltage (SVT) and low threshold voltage (LVT) transistors. The proposed structure does not apply any passive resistors or bipolar junction transistors (BJT). The reference generator is designed using a 55 nm (shrinked 65 nm) CMOS process and achieved a temperature coefficient (TC) of 1.6-ppm/°C over the -40°C to 85°C temperature ranges. The power supply rejection ratio (PSRR) for this structure is -93dB.

KW - CMOS

KW - LVT

KW - PSRR

KW - SVT

KW - Voltage Generator

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Rikan BS, Abbasizadeh H, Rad RE, Hejazi A, Lee KY. 1.6-ppm/°C Reference Voltage Generator with PSRR of -93dB based on Threshold Voltage Difference of LVT and SVT Devices. In Proceedings - International SoC Design Conference 2018, ISOCC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 60-61. 8649947. (Proceedings - International SoC Design Conference 2018, ISOCC 2018). doi: 10.1109/ISOCC.2018.8649947

1.6-ppm/°C Reference Voltage Generator with PSRR of -93dB based on Threshold Voltage Difference of LVT and SVT Devices

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Keywords

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