100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

Fei Gao; S. Balakumar; Li Rui; S. J. Lee; Chih Hang Tung; Anyan Du; T. Sudhiranjan; W. S. Hwang; N. Balasubramanian; Patrick Lo; Chi Dong-Zhi; Dim Lee Kwong

doi:10.1109/IPFA.2006.251052

100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

Fei Gao
, S. Balakumar
, Li Rui
, S. J. Lee
, Chih Hang Tung
, Anyan Du
, T. Sudhiranjan
, W. S. Hwang
, N. Balasubramanian
, Patrick Lo
, Chi Dong-Zhi
, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO₂/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented.

Original language	English
Title of host publication	Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Pages	311-313
Number of pages	3
DOIs	https://doi.org/10.1109/IPFA.2006.251052
State	Published - 2006
Externally published	Yes
Event	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore Duration: 3 Jul 2006 → 7 Jul 2006

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Country/Territory	Singapore
City	Singapore
Period	3/07/06 → 7/07/06

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10.1109/IPFA.2006.251052

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Gao, F., Balakumar, S., Rui, L., Lee, S. J., Tung, C. H., Du, A., Sudhiranjan, T., Hwang, W. S., Balasubramanian, N., Lo, P., Dong-Zhi, C., & Kwong, D. L. (2006). 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 (pp. 311-313). Article 4017077 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2006.251052

Gao, Fei ; Balakumar, S. ; Rui, Li et al. / 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach. Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. pp. 311-313 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{db62a3013e7e48fd88b1dd86d9d1d2db,

title = "100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach",

abstract = "Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented.",

author = "Fei Gao and S. Balakumar and Li Rui and Lee, \{S. J.\} and Tung, \{Chih Hang\} and Anyan Du and T. Sudhiranjan and Hwang, \{W. S.\} and N. Balasubramanian and Patrick Lo and Chi Dong-Zhi and Kwong, \{Dim Lee\}",

year = "2006",

doi = "10.1109/IPFA.2006.251052",

language = "English",

isbn = "1424402069",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "311--313",

booktitle = "Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006",

note = "13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 ; Conference date: 03-07-2006 Through 07-07-2006",

}

Gao, F, Balakumar, S, Rui, L, Lee, SJ, Tung, CH, Du, A, Sudhiranjan, T, Hwang, WS, Balasubramanian, N, Lo, P, Dong-Zhi, C & Kwong, DL 2006, 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach. in Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006., 4017077, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 311-313, 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006, Singapore, Singapore, 3/07/06. https://doi.org/10.1109/IPFA.2006.251052

100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach. / Gao, Fei; Balakumar, S.; Rui, Li et al.
Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 311-313 4017077 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

AU - Gao, Fei

AU - Balakumar, S.

AU - Rui, Li

AU - Lee, S. J.

AU - Tung, Chih Hang

AU - Du, Anyan

AU - Sudhiranjan, T.

AU - Hwang, W. S.

AU - Balasubramanian, N.

AU - Lo, Patrick

AU - Dong-Zhi, Chi

AU - Kwong, Dim Lee

PY - 2006

Y1 - 2006

N2 - Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented.

AB - Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented.

UR - https://www.scopus.com/pages/publications/34250613967

U2 - 10.1109/IPFA.2006.251052

DO - 10.1109/IPFA.2006.251052

M3 - Conference contribution

AN - SCOPUS:34250613967

SN - 1424402069

SN - 9781424402069

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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EP - 313

BT - Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

T2 - 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

Y2 - 3 July 2006 through 7 July 2006

ER -

Gao F, Balakumar S, Rui L, Lee SJ, Tung CH, Du A et al. 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 311-313. 4017077. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2006.251052

100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

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