Personal profile
Education
Ph.D. Stanford University Electrical Engineering, 2010
M.S. Stanford University, Electrical Engineering, 2006
B.S. KAIST, Electrical Engineering, 2004
Professional Experience
2024 – Present, Associate Professor, Sungkyunkwan University
2020 – 2024, Associate Professor, School of Electrical Engineering, Hanyang University ERICA
2016 – 2020, Assistant Professor, School of Electrical Engineering, Hanyang University ERICA
2010 – 2016, Chief Research Engineer, LG Display
Fingerprint
- 1 Similar Profiles
Collaborations and top research areas from the last five years
-
Steep-Switching Memory FET for Noise-Resistant Reservoir Computing System
Kang, S., Kim, J., Lee, S. M., Baek, S., Oh, S., Lee, Y. & Lee, S., 2 Feb 2026, In: Advanced Functional Materials. 36, 10, e11704.Research output: Contribution to journal › Article › peer-review
Open Access2 Link opens in a new tab Scopus citations -
Artificial Optoelectronic Synapse Featuring Bidirectional Post-Synaptic Current for Compact and Energy-Efficient Neural Hardware
Ahn, H., Kim, Y., Seo, S., Lee, J., Lee, S., Oh, S., Kim, B., Park, J., Kang, S., Kim, Y., Ham, A., Lee, J., Park, D., Kwon, S., Lee, D., Ryu, J. E., Shin, J. C., Sahasrabudhe, A., Kim, K. S. & Bae, S. H. & 4 others, , 28 Aug 2025, In: Advanced Materials. 37, 34, 2418582.Research output: Contribution to journal › Article › peer-review
9 Link opens in a new tab Scopus citations -
Deterministic Precessional MRAM With Low Write Error Rate: Fokker-Planck Modeling and Design Optimization
Sin, S. & Oh, S., 2025, (Accepted/In press) In: IEEE Journal of the Electron Devices Society.Research output: Contribution to journal › Article › peer-review
Open Access -
Energy-Efficient Voltage-Induced Self-Regulated Precessional MRAM with Low Write Error Rate <10−9
Sin, S. & Oh, S., 2025, 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1 Link opens in a new tab Scopus citations -
Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping
Park, J. H., Kim, H. B., Yu, S. M., Kim, K., Baeck, J. H., Noh, J., Park, K. S., Yoon, S. Y., Ahn, J. H. & Oh, S., Dec 2025, In: Scientific Reports. 15, 1, 23113.Research output: Contribution to journal › Article › peer-review
Open Access2 Link opens in a new tab Scopus citations