Research output per year
Research output per year
Personal profile
Education
Hanyang University: B.S. in Metallurgical Engineering (1977-1981)
Seoul National University: M.S. in Materials Engineering (1981-1983)
University of Illinois at Urbana-Champaign, USA: Ph.D. in Electronic Materials Engineering (1984-1989)
Professional Experience
University of Illinois at Urbana-Champaign, Research Assistant (1984-1989)
Institute of Semiconductors in Tektronix Inc. USA, Process Engineer (1989-1991)
Institute of Semiconductors in TDK Corporation (SSI Inc.), USA, Senior Engineer (1991-1992)
School of Advanced Materials Science and Engineering, SKKU, Professor (1992-Present)
Awards
2000 / Citation Classic Award / ISI Thomspon
2003 / 공로상 / 나노특화 Fab Center 유치
2003 / 삼성전자 사장상 / 공적상
2004 / 나노연구혁신 금상 / 나노기술협의회
2004 / 학술상 / 성균학술상
2005 / SKKU Fellow / SKKU Fellow
2006 / SEMI (세계반도체장비재료협회)회장상 / SEMI STS 감사패
2007 / 한국마이크로전자 및 패키징학회
2007 추계 학술대회 최우수포스터
2008 / KAATS
2007년 최우수논문상
2009 / 공로상 / 나노코리아 공로상, 2009년 8월, 나노코리아
2009 / 성균 excellent professor상, 2009년 /성균관대학교 교수상
2010 / 성균관대학교 공과대학 전임교원 및 훌륭한 공대 교수상 / 성균관대학교 교수상
2011 / 성균관대학교 공과대학 전임교원 및 훌륭한 공대 교수상 / 성균관대학교 교수상
2011 / 한국반도체산업협회장상 / 공적상
2012 / 사단법인 한국재료학회 학술상 / 사단법인 한국재료학회
2015 / 학술상 / 한국진공학회 학술상
Fingerprint
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Anisotropic atomic layer etching of molybdenum by formation of chloride/oxychloride
Jang, Y. J., Kim, D. S., Kwon, H. I., Gil, H. S., Kim, K. C., Kim, D. W., Jeong, B. H., Kim, D. W. & Yeom, G. Y., 30 Aug 2025, In: Applied Surface Science. 701, 163208.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
Dielectric Hole Etching With C2F4O and C2HF3O as a Replacement of CF4/O2
Jeong, J. W., Hong, J. W., Eoh, H. J., Kim, C. H., Kim, K. L., Kim, S. H., Jeon, Y. W., Park, J. S., Cho, H. M., Jeong, Y. G., Jung, D. W., Yeo, Y. J., Yeom, G. Y. & Kim, D. W., 2025, (Accepted/In press) In: Plasma Processes and Polymers.Research output: Contribution to journal › Article › peer-review
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Effect of atomic layer etching on the surface damage removal of GaN-based light emitting diodes
Kim, C. H., Hong, J. W., Lim, W. S., Kim, J. Y., Kim, K. L., Park, J. S., Park, Y. J., Kim, E. K., Eoh, H. J., Jeong, J. W., Kim, S. H., Jeon, Y. W., Yeom, G. Y. & Kim, D. W., 30 Dec 2025, In: Applied Surface Science. 714, 164429.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Effect of NF3, WF6, and MoF6 Additive Gases on High Aspect Ratio Contact SiO2 Etching in c-C4F8/C4F6/Ar/O2 Plasmas
Tak, H. W., Choi, C. H., Kim, S. B., Park, M. H., Lee, J. S., Sato, A., Kim, B. S., Jang, J. K., Kim, E. K., Kim, D. W. & Yeom, G. Y., 11 Mar 2025, In: ACS Applied Electronic Materials. 7, 5, p. 1953-1965 13 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Effect of showerhead electrode materials on high aspect ratio etching of SiO2
Kim, S. B., Tak, H. W., Choi, C. H., Lee, J. S., Park, M. H., Sato, A., Lee, S. Y., Kim, D. W. & Yeom, G. Y., 2025, (Accepted/In press) In: Journal of Industrial and Engineering Chemistry.Research output: Contribution to journal › Article › peer-review
Press/Media
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Plasma Processing Laboratory leading Next Generation Semiconductor Etching Technology
5/10/22
1 Media contribution
Press/Media