Focused Ion Beam 3

The system integrates Ga FIB, SEM, and Ar ion beam technologies to minimize FIB-induced damage and enable high-precision sample preparation. It supports accelerating voltages from 0.5 to 30 kV for both FIB and SEM, with FIB achieving a maximum beam current of 100 nA and a resolution of 4 nm at 30 kV. The SEM provides high-resolution imaging at 2.8 nm (5 kV) and 3.5 nm (1 kV), facilitating precise observation.