Development of Hafnium Oxide-Based Next-Generation Memory Devices for AI Hardware

Press/Media

Description

Development of Volatile and Nonvolatile Hafnium Oxide Devices Using Thermal Expansion Coefficient Differences of Electrodes

Period	11 Mar 2026

Title	Development of Hafnium Oxide-Based Next-Generation Memory Devices for AI Hardware
Degree of recognition	International
Media name/outlet	Research Stories
Media type	Web
Country/Territory	Korea, Republic of
Date	11/03/26
Description	Development of Volatile and Nonvolatile Hafnium Oxide Devices Using Thermal Expansion Coefficient Differences of Electrodes
URL	https://www.skku.edu/eng/Research/industry/researchStory_view.do?mode=view&articleNo=135501
Persons	Taesung Kim